STGB6NC60HDT4
ActiveTRANS IGBT CHIP N-CH 600V 15A 3-PIN(2+TAB) D2PAK T/R
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STGB6NC60HDT4
ActiveTRANS IGBT CHIP N-CH 600V 15A 3-PIN(2+TAB) D2PAK T/R
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGB6NC60HDT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 15 A |
| Current - Collector Pulsed (Icm) | 21 A |
| Gate Charge | 13.6 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 56 W |
| Reverse Recovery Time (trr) | 21 ns |
| Supplier Device Package | D2PAK |
| Switching Energy | 68 µJ, 20 µJ |
| Td (on/off) @ 25°C [custom] | 12 ns |
| Td (on/off) @ 25°C [custom] | 76 ns |
| Test Condition | 15 V, 390 V, 3 A, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGB6NC60HDT4 Series
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.Low on voltage drop (Vcesat)Low CRES/ CIESratio (no cross-conduction susceptibility)Very soft ultra fast recovery antiparallel diodeHigh frequency operation
Documents
Technical documentation and resources