ADPA7007C-KIT
UnknownGAAS, PHEMT, MMIC,1 W POWER AMPLIFIER, 18 GHZ TO 44 GHZ
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ADPA7007C-KIT
UnknownGAAS, PHEMT, MMIC,1 W POWER AMPLIFIER, 18 GHZ TO 44 GHZ
Technical Specifications
Parameters and characteristics for this part
| Specification | ADPA7007C-KIT |
|---|---|
| Current - Supply | 1.4 A |
| Frequency (Max) | 44 GHz |
| Frequency (Min) | 18 GHz |
| Gain | 21 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 6.5 dB |
| P1dB | 30 dBm |
| Package / Case | Die |
| Package Name | Die |
| RF Type | General Purpose |
| Test Frequency (Maximum) | 44 GHz |
| Test Frequency (Minimum) | 36 GHz |
| Voltage - Supply (Maximum) | 5 V |
| Voltage - Supply (Minimum) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
CAD
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Description
General part information
ADPA7007 Series
The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides a gain of 21.5 dB, an output power for 1 dB compression (P1dB) of 31 dBm, and a typical output thirdorder intercept (IP3) of 41 dBm. The ADPA7007CHIP requires 1400 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data was taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.ApplicationsMilitary and spaceTest instrumentation
Documents
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