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ADPA7007

ADPA7007 Series

GaAs, pHEMT, MMIC,1 W Power Amplifier, 18 GHz to 44 GHz

Catalog

GaAs, pHEMT, MMIC,1 W Power Amplifier, 18 GHz to 44 GHz

PartNoise FigureRF TypeCurrent - SupplyMounting TypeP1dBGainPackage / CaseVoltage - Supply (Maximum)Voltage - Supply (Minimum)Frequency (Max)Frequency (Min)Package NamePackage LengthPackage WidthTest Frequency (Minimum)Test Frequency (Maximum)
ADPA7007AEHZ-R7
Analog Devices Inc./Maxim Integrated
6 dB
General Purpose
1.4 A
Surface Mount
30 dBm
20.5 dB
18-LCQFN Exposed Pad
5 V
4 V
44 GHz
20 GHz
18-CLCC
7 mm
7 mm
26 GHz
34 GHz
ADPA7007AEHZ
Analog Devices Inc./Maxim Integrated
6 dB
General Purpose
1.4 A
Surface Mount
30 dBm
20.5 dB
18-LCQFN Exposed Pad
5 V
4 V
44 GHz
20 GHz
18-CLCC
7 mm
7 mm
26 GHz
34 GHz
ADPA7007CHIP
Analog Devices Inc./Maxim Integrated
6.5 dB
General Purpose
1.4 A
Surface Mount
30 dBm
21 dB
Die
5 V
4 V
44 GHz
18 GHz
Die
36 GHz
44 GHz
ADPA7007C-KIT
Analog Devices Inc./Maxim Integrated
6.5 dB
General Purpose
1.4 A
Surface Mount
30 dBm
21 dB
Die
5 V
4 V
44 GHz
18 GHz
Die
36 GHz
44 GHz

Description

AI
The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides a gain of 21.5 dB, an output power for 1 dB compression (P1dB) of 31 dBm, and a typical output thirdorder intercept (IP3) of 41 dBm. The ADPA7007CHIP requires 1400 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data was taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.ApplicationsMilitary and spaceTest instrumentation