Discrete Semiconductor Products

APT53N60BC6

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POWER FIELD-EFFECT TRANSISTOR, 53A I(D), 600V, 0.07OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247

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Search across all available documentation for this part.

DocumentsAPT60N60BCSG, APT60N60SCSG MOSFET SUPERJUNCTION 600 V 60 A TO-247 Datasheet APT38N60BC6, APT38N60SC6 MOSFET SUPERJUNCTION 600 V 38 A TO-247 Datasheet +4

Discrete Semiconductor Products

APT53N60BC6

Active

Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 53A I(D), 600V, 0.07OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247

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DocumentsAPT60N60BCSG, APT60N60SCSG MOSFET SUPERJUNCTION 600 V 60 A TO-247 Datasheet APT38N60BC6, APT38N60SC6 MOSFET SUPERJUNCTION 600 V 38 A TO-247 Datasheet +4

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	APT53N60BC6

Current - Continuous Drain (Id) @ 25°C	53 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	154 nC
Input Capacitance (Ciss) (Max) @ Vds	4020 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	417 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	TO-247 [B]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

SUPERJUNCTION-600V Series

600V Superjunction MOSFET

Part	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Technology	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Microchip Technology APT53N60BC6	N-Channel	600 V	Through Hole	20 V	MOSFET (Metal Oxide)	TO-247-3	TO-247 [B]	4020 pF	417 W	3.5 V	-55 °C	150 °C	70 mOhm	10 V	53 A	154 nC
Microchip Technology APT77N60SC6	N-Channel	600 V	Surface Mount	20 V	MOSFET (Metal Oxide)	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	D3PAK	13600 pF		2.96 mA 3.6 V	-55 °C	150 °C	41 mOhm	10 V	77 A	260 nC	481 W
Microchip Technology APT106N60LC6	N-Channel	600 V	Through Hole	20 V	MOSFET (Metal Oxide)	TO-264-3 TO-264AA	TO-264 (L)	8390 pF		3.5 V	-55 °C	150 °C		10 V		308 nC	833 W	35 mOhm
Microchip Technology APT38N60BC6	N-Channel	600 V	Through Hole	20 V	MOSFET (Metal Oxide)	TO-247-3	TO-247 [B]	2826 pF		3.5 V	-55 °C	150 °C	99 mOhm	10 V	38 A		278 W		112 nC
Microchip Technology APT47N60BC3G	N-Channel	600 V	Through Hole	20 V	MOSFET (Metal Oxide)	TO-247-3	TO-247 [B]	7015 pF	417 W	3.9 V	-55 °C	150 °C		10 V	47 A	260 nC
Microchip Technology APT30N60BC6	N-Channel	600 V	Through Hole	20 V	MOSFET (Metal Oxide)	TO-247-3	TO-247 [B]	2267 pF		3.5 V	-55 °C	150 °C	125 mOhm	10 V	30 A	88 nC	219 W
Microchip Technology APT60N60SCSG/TR	N-Channel	600 V	Surface Mount	30 V	MOSFET (Metal Oxide)	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	D3PAK	7200 pF	431 W	3.9 V	-55 °C	150 °C	45 mOhm	10 V	60 A				190 nC
Microchip Technology APT60N60SCSG	N-Channel	600 V	Surface Mount	30 V	MOSFET (Metal Oxide)	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	D3PAK	7200 pF	431 W	3.9 V	-55 °C	150 °C	45 mOhm	10 V	60 A				190 nC
Microchip Technology APT47N60SC3G	N-Channel	600 V	Surface Mount	20 V	MOSFET (Metal Oxide)	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	D3PAK	7015 pF	417 W	3.9 V	-55 °C	150 °C		10 V	47 A	260 nC
Microchip Technology APT77N60BC6	N-Channel	600 V	Through Hole	20 V	MOSFET (Metal Oxide)	TO-247-3	TO-247 [B]	13600 pF		2.96 mA 3.6 V	-55 °C	150 °C	41 mOhm	10 V	77 A	260 nC	481 W