Integrated Circuits (ICs)

IR2011SPBF

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INFINEON

GATE DRIVERS 200V HIGH & LOW-SIDE ,1A,80NS,DSO-8

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DocumentsTechnical Data Sheet EN Datasheet

Integrated Circuits (ICs)

IR2011SPBF

Active

INFINEON

GATE DRIVERS 200V HIGH & LOW-SIDE ,1A,80NS,DSO-8

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DocumentsTechnical Data Sheet EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2011SPBF

Channel Type	Independent
Current - Peak Output (Source, Sink)	1 A, 1 A
Driven Configuration	High-Side or Low-Side
Gate Type	N-Channel MOSFET, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	200 V
Input Type	Inverting
Logic Voltage - VIL, VIH	0.7 V, 2.2 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Rise / Fall Time (Typ) [custom]	20 ns
Rise / Fall Time (Typ) [custom]	35 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2011 Series

Part	Gate Type	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Mounting Type	Driven Configuration	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink)	Voltage - Supply [Max]	Voltage - Supply [Min]	Number of Drivers	Operating Temperature [Min]	Operating Temperature [Max]	Logic Voltage - VIL, VIH	Input Type	Package / Case	Package / Case	Package / Case
INFINEON IR2011SPBF	MOSFET (N-Channel) N-Channel MOSFET	200 V	8-SOIC	Surface Mount	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2011STR	MOSFET (N-Channel) N-Channel MOSFET	200 V	8-SOIC	Surface Mount	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2011STRPBF	MOSFET (N-Channel) N-Channel MOSFET	200 V	8-SOIC	Surface Mount	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2011	MOSFET (N-Channel) N-Channel MOSFET	200 V	8-PDIP	Through Hole	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting		8-DIP (0.300" 7.62mm)
INFINEON IR2011S	MOSFET (N-Channel) N-Channel MOSFET	200 V	8-SOIC	Surface Mount	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2011PBF	MOSFET (N-Channel) N-Channel MOSFET	200 V	8-PDIP	Through Hole	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting		8-DIP (0.300" 7.62mm)
INFINEON IR2011PBF	N-Channel MOSFET	200 V	8-PDIP	Through Hole	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting		8-DIP (0.300" 7.62mm)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2540	$ 1.79
	Tube	1	$ 2.78
		10	$ 2.50
		95	$ 2.05
		285	$ 1.94
		570	$ 1.74
		1045	$ 1.47
		2565	$ 1.40
		5035	$ 1.34
Mouser	N/A	1	$ 1.45
		10	$ 1.12
		25	$ 0.91
		100	$ 0.87
		250	$ 0.85
		500	$ 0.82
		1000	$ 0.81
		3800	$ 0.81
Newark	Each	1	$ 2.27
		10	$ 1.68
		25	$ 1.59
		50	$ 1.49
		100	$ 1.39
		250	$ 1.33
		500	$ 1.30

Description

General part information

IR2011 Series

High-Side or Low-Side Gate Driver IC Inverting 8-SOIC

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet