IR2011 Series

Manufacturer: INFINEON

Catalog

GATE DRIVERS 200V HIGH & LOW-SIDE ,1A,80NS,DSO-8

Part	Gate Type	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Mounting Type	Driven Configuration	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink)	Voltage - Supply [Max]	Voltage - Supply [Min]	Number of Drivers	Operating Temperature [Min]	Operating Temperature [Max]	Logic Voltage - VIL, VIH	Input Type	Package / Case	Package / Case	Package / Case
INFINEON IR2011SPBF	MOSFET (N-Channel) N-Channel MOSFET	200 V	8-SOIC	Surface Mount	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2011STR	MOSFET (N-Channel) N-Channel MOSFET	200 V	8-SOIC	Surface Mount	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2011STRPBF	MOSFET (N-Channel) N-Channel MOSFET	200 V	8-SOIC	Surface Mount	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2011	MOSFET (N-Channel) N-Channel MOSFET	200 V	8-PDIP	Through Hole	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting		8-DIP (0.300" 7.62mm)
INFINEON IR2011S	MOSFET (N-Channel) N-Channel MOSFET	200 V	8-SOIC	Surface Mount	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2011PBF	MOSFET (N-Channel) N-Channel MOSFET	200 V	8-PDIP	Through Hole	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting		8-DIP (0.300" 7.62mm)
INFINEON IR2011PBF	N-Channel MOSFET	200 V	8-PDIP	Through Hole	High-Side or Low-Side	Independent	20 ns	35 ns	1 A 1 A	20 V	10 VDC	2	-40 °C	150 °C	0.7 V 2.2 V	Inverting		8-DIP (0.300" 7.62mm)