Discrete Semiconductor Products
STD105N10F7AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 100 V, 6.8 MOHM TYP., 80 A STRIPFET F7 POWER MOSFET IN A DPAK PACKAGE
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Discrete Semiconductor Products
STD105N10F7AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 100 V, 6.8 MOHM TYP., 80 A STRIPFET F7 POWER MOSFET IN A DPAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD105N10F7AG |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 4369 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 120 W |
| Qualification | AEC-Q101 |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD105N10F7AG Series
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources