Discrete Semiconductor Products

SQ2310ES-T1_BE3

Obsolete

MOSFET N-CH 20V 6A SOT23-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 6A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2310ES-T1_BE3

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	8.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	485 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	2 W
Qualification	AEC-Q101
Rds On (Max)	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Rds On (Max)	Technology	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Qualification	Gate Charge (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package / Case	Grade
Vishay Dale SQ2310ES-T1_GE3	30 mOhm	MOSFET (Metal Oxide)	2 W	-55 °C	175 °C	485 pF	N-Channel	8 V	6 A	4.5 V	1.5 V	SOT-23-3 (TO-236)	AEC-Q101	8.5 nC	Surface Mount	20 V	1 V	SC-59 SOT-23-3 TO-236-3	Automotive
Vishay Dale SQ2310ES-T1_BE3	30 mOhm	MOSFET (Metal Oxide)	2 W	-55 °C	175 °C	485 pF	N-Channel	8 V	6 A	4.5 V	1.5 V	SOT-23-3 (TO-236)	AEC-Q101	8.5 nC	Surface Mount	20 V	1 V	SC-59 SOT-23-3 TO-236-3	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 20 V 6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources