SQ2310 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 6A TO236
| Part | Mounting Type | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Technology | Vgs(th) (Max) @ Id | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | N-Channel | 1.5 V 4.5 V | 20 V | 8.5 nC | 8 V | -55 °C | 175 ░C | SC-59 SOT-23-3 TO-236-3 | 6 A | SOT-23-3 (TO-236) | 485 pF | 30 mOhm | 2 W | MOSFET (Metal Oxide) | 1 V | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | N-Channel | 1.5 V 4.5 V | 20 V | 8.5 nC | 8 V | -55 °C | 175 ░C | SC-59 SOT-23-3 TO-236-3 | 6 A | SOT-23-3 (TO-236) | 485 pF | 30 mOhm | 2 W | MOSFET (Metal Oxide) | 1 V | AEC-Q101 | Automotive |