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Technical Specifications
Parameters and characteristics for this part
| Specification | PXN5R4-30QLJ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 66 A, 14 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 39 W, 1.8 W |
| Rds On (Max) @ Id, Vgs | 5.4 mOhm |
| Supplier Device Package | MLPAK33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 28819 | $ 1.31 | |
Description
General part information
PXN5R4-30QL Series
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.