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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MLPAK33 | 150 °C | -55 °C | 1600 pF | 5.4 mOhm | 36.3 nC | N-Channel | 20 V | 14 A 66 A | 30 V | 1.8 W 39 W | 2.5 V | 4.5 V 10 V | MOSFET (Metal Oxide) | Surface Mount | 8-PowerVDFN |