Discrete Semiconductor Products

PMPB17EPX

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TRANS MOSFET P-CH 30V 7.7A 6-PIN DFN-M EP T/R

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DocumentsPMPB17EPX | Datasheet plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.65 mm +4

Discrete Semiconductor Products

PMPB17EPX

Active

Nexperia USA Inc.

TRANS MOSFET P-CH 30V 7.7A 6-PIN DFN-M EP T/R

Deep-Dive with AI

DocumentsPMPB17EPX | Datasheet plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.65 mm +4

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB17EPX

Current - Continuous Drain (Id) @ 25°C	7.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	1570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.9 W, 13 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	DFN2020M-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

PMPB17EP Series

30 V, P-channel Trench MOSFET

Part	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Vgs (Max)
Nexperia USA Inc. PMPB17EPX	Surface Mount	6-UDFN Exposed Pad	7.7 A	DFN2020M-6	1.9 W 13 W	4.5 V 10 V	21 mOhm	2.5 V	MOSFET (Metal Oxide)	1570 pF	30 V	150 °C	-55 °C	P-Channel	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	9000	$ 0.12
Digikey	N/A	1252	$ 0.83

Description

General part information

PMPB17EP Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.