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30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Mounting Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Surface Mount | 6-UDFN Exposed Pad | 7.7 A | DFN2020M-6 | 1.9 W 13 W | 4.5 V 10 V | 21 mOhm | 2.5 V | MOSFET (Metal Oxide) | 1570 pF | 30 V | 150 °C | -55 °C | P-Channel | 20 V |