Discrete Semiconductor Products

SI8409DB-T1-E1

Active

MOSFET P-CH 30V 4.6A 4MICROFOOT

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 30V 4.6A 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8409DB-T1-E1

Current - Continuous Drain (Id) @ 25°C	4.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Power Dissipation (Max) [Max]	1.47 W
Rds On (Max) @ Id, Vgs	46 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Technology	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI8409DB-T1-E1	Surface Mount	-55 °C	150 °C	30 V	2.5 V 4.5 V	1.4 V	46 mOhm	4.6 A	1.47 W	MOSFET (Metal Oxide)	4-Microfoot	4-XFBGA CSPBGA	26 nC	P-Channel	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot

Technical documentation and resources