SI8409 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 30V 4.6A 4MICROFOOT
| Part | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Technology | Supplier Device Package | Package / Case | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | -55 °C | 150 °C | 30 V | 2.5 V 4.5 V | 1.4 V | 46 mOhm | 4.6 A | 1.47 W | MOSFET (Metal Oxide) | 4-Microfoot | 4-XFBGA CSPBGA | 26 nC | P-Channel | 12 V |