Discrete Semiconductor Products

BUJ403A/DG,127

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TRANS GP BJT NPN 550V 6A 3-PIN(3+TAB) TO-220AB RAIL

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Discrete Semiconductor Products

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TRANS GP BJT NPN 550V 6A 3-PIN(3+TAB) TO-220AB RAIL

Technical Specifications

Parameters and characteristics for this part

Specification	BUJ403A/DG,127

Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	100 W
Supplier Device Package	TO-220AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	550 V

Part	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Power - Max [Max]	Transistor Type
WeEn Semiconductors BUJ403A,127	150 °C	1 V	20	100 µA	Through Hole	550 V	TO-220-3	TO-220AB	100 W	NPN
WeEn Semiconductors BUJ403A/DG,127	150 °C	1 V	20	100 µA	Through Hole	550 V	TO-220-3	TO-220AB	100 W	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 550 V 6 A 100 W Through Hole TO-220AB

Technical documentation and resources

No documents available