Discrete Semiconductor Products

IRLU014PBF

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MOSFET N-CH 60V 7.7A TO251AA

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Discrete Semiconductor Products

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MOSFET N-CH 60V 7.7A TO251AA

Technical Specifications

Parameters and characteristics for this part

Specification	IRLU014PBF

Current - Continuous Drain (Id) @ 25°C	7.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.4 nC
Input Capacitance (Ciss) (Max) @ Vds	400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	25 W, 2.5 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Technology	FET Type	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRLU014PBF	400 pF	8.4 nC	2.5 W 25 W	7.7 A	-55 °C	150 °C	Through Hole	60 V	MOSFET (Metal Oxide)	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	TO-251AA	2 V	10 V	200 mOhm	4 V 5 V
Vishay General Semiconductor - Diodes Division IRLU014	400 pF	8.4 nC	2.5 W 25 W	7.7 A	-55 °C	150 °C	Through Hole	60 V	MOSFET (Metal Oxide)	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	TO-251AA	2 V	10 V	200 mOhm	4 V 5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA

Technical documentation and resources