IRLU014 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 7.7A TO251AA
| Part | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Technology | FET Type | Package / Case | Supplier Device Package | Vgs(th) (Max) @ Id | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 400 pF | 8.4 nC | 2.5 W 25 W | 7.7 A | -55 °C | 150 °C | Through Hole | 60 V | MOSFET (Metal Oxide) | N-Channel | IPAK TO-251-3 Short Leads TO-251AA | TO-251AA | 2 V | 10 V | 200 mOhm | 4 V 5 V |
Vishay General Semiconductor - Diodes Division | 400 pF | 8.4 nC | 2.5 W 25 W | 7.7 A | -55 °C | 150 °C | Through Hole | 60 V | MOSFET (Metal Oxide) | N-Channel | IPAK TO-251-3 Short Leads TO-251AA | TO-251AA | 2 V | 10 V | 200 mOhm | 4 V 5 V |