Discrete Semiconductor Products

IPI65R190CFDXKSA2

Obsolete

TRANS MOSFET N-CH 650V 17.5A 3-PIN(3+TAB) TO-262 TUBE

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Discrete Semiconductor Products

Obsolete

TRANS MOSFET N-CH 650V 17.5A 3-PIN(3+TAB) TO-262 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IPI65R190CFDXKSA2

Current - Continuous Drain (Id) @ 25°C	17.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	68 nC
Input Capacitance (Ciss) (Max) @ Vds	1850 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	151 W
Rds On (Max) @ Id, Vgs [Max]	190 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPI65R190C6XKSA1	10 V	I2PAK TO-262-3 Long Leads TO-262AA	73 nC	190 mOhm	PG-TO262-3	20.2 A	MOSFET (Metal Oxide)	151 W	3.5 V	N-Channel	150 °C	-55 °C	20 V	Through Hole	1620 pF	650 V
INFINEON IPI65R190CFDXKSA2	10 V	I2PAK TO-262-3 Long Leads TO-262AA	68 nC	190 mOhm	PG-TO262-3	17.5 A	MOSFET (Metal Oxide)	151 W	4.5 V	N-Channel	150 °C	-55 °C	20 V	Through Hole		650 V	1850 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.13

General part information

N-Channel 650 V 17.5A (Tc) 151W (Tc) Through Hole PG-TO262-3

Technical documentation and resources