IPI65R190 Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 650V 20.2A TO262-3

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPI65R190C6XKSA1	10 V	I2PAK TO-262-3 Long Leads TO-262AA	73 nC	190 mOhm	PG-TO262-3	20.2 A	MOSFET (Metal Oxide)	151 W	3.5 V	N-Channel	150 °C	-55 °C	20 V	Through Hole	1620 pF	650 V
INFINEON IPI65R190CFDXKSA2	10 V	I2PAK TO-262-3 Long Leads TO-262AA	68 nC	190 mOhm	PG-TO262-3	17.5 A	MOSFET (Metal Oxide)	151 W	4.5 V	N-Channel	150 °C	-55 °C	20 V	Through Hole		650 V	1850 pF