Discrete Semiconductor Products

MCMNP2065A-TP

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MOSFET N/P-CH 20V 6A/4A 6DFN

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Discrete Semiconductor Products

Active

MOSFET N/P-CH 20V 6A/4A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	MCMNP2065A-TP

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4 A, 6 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	5.41 nC, 7.65 nC
Input Capacitance (Ciss) (Max) @ Vds	880 pF, 418 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VDFN Exposed Pad
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	25 mOhm, 51 mOhm
Supplier Device Package	DFN2020-6L
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Configuration	Supplier Device Package	Mounting Type	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Rds On (Max) @ Id, Vgs [Min]	Power - Max
Micro Commercial Components MCMNP2065A-TP	N and P-Channel	DFN2020-6L	Surface Mount	2 W	25 mOhm 51 mOhm	4 A 6 A	6-VDFN Exposed Pad	5.41 nC 7.65 nC	418 pF 880 pF	1 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)
Micro Commercial Components MCMNP2065-TP	N and P-Channel	DFN2020-6L	Surface Mount			6 A	6-VDFN Exposed Pad	6.05 nC	418 pF 1010 pF	1 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	10.98 nC	42 mOhm	25 mOhm	1.8 W 2.2 W

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General part information

Mosfet Array 20V 6A (Ta), 4A (Ta) 2W Surface Mount DFN2020-6L

Technical documentation and resources

No documents available