Discrete Semiconductor Products
PMDPB58UPE,115
ActiveNexperia USA Inc.
TRANS MOSFET P-CH 20V 3.6A 6-PIN HUSON EP T/R
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Discrete Semiconductor Products
PMDPB58UPE,115
ActiveNexperia USA Inc.
TRANS MOSFET P-CH 20V 3.6A 6-PIN HUSON EP T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMDPB58UPE,115 |
|---|---|
| Configuration | 2 P-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 3.6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 9.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 804 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UFDFN Exposed Pad |
| Power - Max [Max] | 515 mW |
| Rds On (Max) @ Id, Vgs [Max] | 67 mOhm |
| Supplier Device Package | 6-HUSON (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 42 | $ 0.84 | |
Description
General part information
PMDPB58UPE Series
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources