20 V dual P-channel Trench MOSFET
20 V dual P-channel Trench MOSFET
| Part | Mounting Type | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Configuration | Package / Case | FET Feature | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Power - Max [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Surface Mount | 20 V | MOSFET (Metal Oxide) | 9.5 nC | 804 pF | 2 P-Channel (Dual) | 6-UFDFN Exposed Pad | Logic Level Gate | 150 °C | -55 °C | 950 mV | 67 mOhm | 515 mW | 6-HUSON (2x2) | 3.6 A |