Discrete Semiconductor Products

SIHB20N50E-GE3

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MOSFET N-CH 500V 19A D2PAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 500V 19A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHB20N50E-GE3

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	179 W
Rds On (Max) @ Id, Vgs [Max]	184 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIHB20N50E-GE3	500 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	184 mOhm	19 A	179 W	1640 pF	4 V	MOSFET (Metal Oxide)	Surface Mount	10 V	N-Channel	-55 °C	150 °C	30 V	92 nC

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General part information

N-Channel 500 V 19A (Tc) 179W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources