SIHB20 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 500V 19A D2PAK
| Part | Drain to Source Voltage (Vdss) | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Technology | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 500 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263 (D2PAK) | 184 mOhm | 19 A | 179 W | 1640 pF | 4 V | MOSFET (Metal Oxide) | Surface Mount | 10 V | N-Channel | -55 °C | 150 °C | 30 V | 92 nC |