Discrete Semiconductor Products

G200P04S2

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MOSFET 2P-CH 40V 9A 8SOP

Discrete Semiconductor Products

Active

MOSFET 2P-CH 40V 9A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G200P04S2

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	9 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Max)	42 nC
Input Capacitance (Ciss) (Max)	2365 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC, 8-SOP
Package Width	3.9 mm
Power - Max (Tc)	2.1 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

Part	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Channel Count	Configuration	Configuration - Features	Technology	Package Length	Package Name	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Power - Max (Tc)	Rds On (Max)
Goford Semiconductor G200P04S2	42 nC	9 A	2	P-Channel	Dual	MOSFET (Metal Oxide)	0.154 in	8-SOIC 8-SOP	3.9 mm	-55 °C	150 °C	2365 pF	Surface Mount	40 V	2.5 V	2.1 W	20 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Mosfet Array 40V 9A (Tc) 2.1W (Tc) Surface Mount 8-SOP

Technical documentation and resources