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Infineon Technologies AG-FP35R12W2T4B11BOMA1 IGBT Modules Trans IGBT Module N-CH 1200V 54A 215W 23-Pin EASY2B-2 Tray
Discrete Semiconductor Products

FP35R12W2T4B11BOMA1

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INFINEON

THE FP35R12W2T4_B11 IS A PIM IGBT4 - T4 MODULE IN A EASYPIM™ 2B HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 35 A.

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Infineon Technologies AG-FP35R12W2T4B11BOMA1 IGBT Modules Trans IGBT Module N-CH 1200V 54A 215W 23-Pin EASY2B-2 Tray
Discrete Semiconductor Products

FP35R12W2T4B11BOMA1

Active
INFINEON

THE FP35R12W2T4_B11 IS A PIM IGBT4 - T4 MODULE IN A EASYPIM™ 2B HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 35 A.

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFP35R12W2T4B11BOMA1
ConfigurationThree Phase Inverter
Current - Collector (Ic) (Max) [Max]54 A
Current - Collector Cutoff (Max) [Max]1 mA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce2 nF
Mounting TypeChassis Mount
NTC ThermistorTrue
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseModule
Power - Max [Max]215 W
Supplier Device PackageModule
Vce(on) (Max) @ Vge, Ic2.25 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 57.60
5$ 57.59
10$ 47.04
DigikeyTray 1$ 65.19
15$ 59.27
30$ 57.29
90$ 53.34

Description

General part information

FP35R12 Series

EasyPIM™ 2B1200 V, 35 A PIMIGBT modulewith fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology. Also available withThermal Interface Material. This module is pin-to-pin compatible with theFP35R12W2T7_B11includingTRENCHSTOP™ IGBT7.

Documents

Technical documentation and resources