NGB30T65M3DFPJ
Active650 V, 50 A TRENCH FIELD-STOP IGBT WITH FULL RATED SILICON DIODE
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NGB30T65M3DFPJ
Active650 V, 50 A TRENCH FIELD-STOP IGBT WITH FULL RATED SILICON DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | NGB30T65M3DFPJ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 56 A |
| Gate Charge | 81 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 199 W |
| Reverse Recovery Time (trr) | 115 ns |
| Supplier Device Package | D2PAK |
| Switching Energy | 780 µJ, 420 µJ |
| Td (on/off) @ 25°C [custom] | 19 ns |
| Td (on/off) @ 25°C [custom] | 139 ns |
| Test Condition | 30 A, 10 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.94 | |
Description
General part information
NGB30T65M3DFP Series
The NGB30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGB30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
Documents
Technical documentation and resources