Infineon Technologies AG-IRS2109STRPBF Gate and Power Drivers Driver 600V 2-OUT High Side/Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC N T/R

Integrated Circuits (ICs)

IR2103STRPBF

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INFINEON

THE IR2103S IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH SHOOT THROUGH PROTECTION (8 LEAD SOIC PACKAGE)

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DocumentsDatasheet Technical Data Sheet EN

Integrated Circuits (ICs)

IR2103STRPBF

Active

INFINEON

THE IR2103S IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH SHOOT THROUGH PROTECTION (8 LEAD SOIC PACKAGE)

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DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2103STRPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	210 mA
Current - Peak Output (Source, Sink) [custom]	360 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting, Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Rise / Fall Time (Typ)	100 ns, 50 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2103 Series

Part	Gate Type	Channel Type	Driven Configuration	Input Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case	Package / Case	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Number of Drivers	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH	Operating Temperature [Min]	Operating Temperature [Max]
INFINEON IR2103STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Half-Bridge	Inverting Non-Inverting	210 mA	360 mA	0.154 in	8-SOIC	3.9 mm	8-SOIC	20 V	10 VDC	2	Surface Mount	600 V	50 ns 100 ns	0.8 V 3 V	-40 °C	150 °C
INFINEON IR2103S	IGBT MOSFET (N-Channel)	Independent	Half-Bridge	Inverting Non-Inverting	210 mA	360 mA	0.154 in	8-SOIC	3.9 mm	8-SOIC	20 V	10 VDC	2	Surface Mount	600 V	50 ns 100 ns	0.8 V 3 V	-40 °C	150 °C
INFINEON IR2103SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Half-Bridge	Inverting Non-Inverting	210 mA	360 mA	0.154 in	8-SOIC	3.9 mm	8-SOIC	20 V	10 VDC	2	Surface Mount	600 V	50 ns 100 ns	0.8 V 3 V	-40 °C	150 °C
INFINEON IR2103	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Half-Bridge	Inverting Non-Inverting	210 mA	360 mA		8-DIP (0.300" 7.62mm)		8-PDIP	20 V	10 VDC	2	Through Hole	600 V	50 ns 100 ns	0.8 V 3 V	-40 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.62
		10	$ 1.45
		25	$ 1.37
		100	$ 1.13
		250	$ 1.05
		500	$ 0.93
		1000	$ 0.74
	Digi-Reel®	1	$ 1.62
		10	$ 1.45
		25	$ 1.37
		100	$ 1.13
		250	$ 1.05
		500	$ 0.93
		1000	$ 0.74
	N/A	5269	$ 1.38
	Tape & Reel (TR)	2500	$ 0.69
		5000	$ 0.65
		12500	$ 0.63
Newark	Each (Supplied on Cut Tape)	1	$ 1.03
		10	$ 0.84
		25	$ 0.79
		50	$ 0.79
		100	$ 0.79
		250	$ 0.78
		500	$ 0.76
		1000	$ 0.73

Description

General part information

IR2103 Series

EiceDRIVER™ 600 Vhalf-bridgegate driver ICwith typical 0.21 A source and 0.36 A sink currents in 8 Lead SOIC package forIGBTsandMOSFETs. Also available in8 Lead PDIP.