IR2103 Series

Manufacturer: INFINEON

Catalog

THE IR2103S IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH SHOOT THROUGH PROTECTION (8 LEAD SOIC PACKAGE)

Part	Gate Type	Channel Type	Driven Configuration	Input Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case	Package / Case	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Number of Drivers	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH	Operating Temperature [Min]	Operating Temperature [Max]
INFINEON IR2103STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Half-Bridge	Inverting Non-Inverting	210 mA	360 mA	0.154 in	8-SOIC	3.9 mm	8-SOIC	20 V	10 VDC	2	Surface Mount	600 V	50 ns 100 ns	0.8 V 3 V	-40 °C	150 °C
INFINEON IR2103S	IGBT MOSFET (N-Channel)	Independent	Half-Bridge	Inverting Non-Inverting	210 mA	360 mA	0.154 in	8-SOIC	3.9 mm	8-SOIC	20 V	10 VDC	2	Surface Mount	600 V	50 ns 100 ns	0.8 V 3 V	-40 °C	150 °C
INFINEON IR2103SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Half-Bridge	Inverting Non-Inverting	210 mA	360 mA	0.154 in	8-SOIC	3.9 mm	8-SOIC	20 V	10 VDC	2	Surface Mount	600 V	50 ns 100 ns	0.8 V 3 V	-40 °C	150 °C
INFINEON IR2103	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	Half-Bridge	Inverting Non-Inverting	210 mA	360 mA		8-DIP (0.300" 7.62mm)		8-PDIP	20 V	10 VDC	2	Through Hole	600 V	50 ns 100 ns	0.8 V 3 V	-40 °C	150 °C