STL26NM60N
ActiveN-CHANNEL 600 V, 0.160 OHM TYP., 19 A MDMESH(TM) II POWER MOSFET IN POWERFLAT(TM) 8X8 HV PACKAGE
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STL26NM60N
ActiveN-CHANNEL 600 V, 0.160 OHM TYP., 19 A MDMESH(TM) II POWER MOSFET IN POWERFLAT(TM) 8X8 HV PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STL26NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.7 A, 19 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 4-PowerVDFN |
| Power Dissipation (Max) | 3 W, 125 mW |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL26NM60N Series
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources