Discrete Semiconductor Products

SI4190DY-T1-GE3

Obsolete

MOSFET N-CH 100V 20A 8-SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 20A 8-SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4190DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	8.8 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.8 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI4190DY-T1-GE3	8-SOIC	3.9 mm	0.154 in	Surface Mount	MOSFET (Metal Oxide)	8.8 mOhm	20 A	8-SOIC	N-Channel	58 nC	2.8 V	2000 pF	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 20A (Tc) Surface Mount 8-SOIC

Technical documentation and resources