SI4190 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 100V 20A 8-SOIC
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Technology | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | MOSFET (Metal Oxide) | 8.8 mOhm | 20 A | 8-SOIC | N-Channel | 58 nC | 2.8 V | 2000 pF | 100 V |