Zenode.ai Logo
Beta
ONSEMI MMUN2236LT1G
Discrete Semiconductor Products

FDN358P

Active
ON Semiconductor

SINGLE P-CHANNEL LOGIC LEVEL POWERTRENCH<SUP>®</SUP> MOSFET -30V, -1.5A, 125MΩ

Deep-Dive with AI

Search across all available documentation for this part.

ONSEMI MMUN2236LT1G
Discrete Semiconductor Products

FDN358P

Active
ON Semiconductor

SINGLE P-CHANNEL LOGIC LEVEL POWERTRENCH<SUP>®</SUP> MOSFET -30V, -1.5A, 125MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDN358P
Current - Continuous Drain (Id) @ 25°C1.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]5.6 nC
Input Capacitance (Ciss) (Max) @ Vds182 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs125 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.49
10$ 0.42
100$ 0.29
500$ 0.23
1000$ 0.18
Digi-Reel® 1$ 0.49
10$ 0.42
100$ 0.29
500$ 0.23
1000$ 0.18
Tape & Reel (TR) 3000$ 0.16
6000$ 0.16
9000$ 0.14
30000$ 0.14
NewarkEach (Supplied on Cut Tape) 1$ 0.72
25$ 0.47
50$ 0.39
100$ 0.30
250$ 0.27
500$ 0.24
1000$ 0.20
ON SemiconductorN/A 1$ 0.15

Description

General part information

FDN358P Series

This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance.These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.