Specification	STF8N80K5

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	950 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STF8N80K5 Series

N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in TO-220FP package

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Mounting Type	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
STMicroelectronics STF8N80K5	150 °C	-55 °C	5 V	25 W	MOSFET (Metal Oxide)	Through Hole	30 V	TO-220-3 Full Pack	10 V	16.5 nC	6 A	TO-220FP	450 pF	N-Channel	950 mOhm	800 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	644	$ 2.75
Newark	Each	1	$ 3.19
		10	$ 1.91
		100	$ 1.84
		500	$ 1.69
		1000	$ 1.64
		3000	$ 1.59
		5000	$ 1.58

Description

General part information

STF8N80K5 Series

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.