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STW35N65DM2
Discrete Semiconductor Products

STW35N65DM2

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STMicroelectronics

N-CHANNEL 650 V, 93 MOHM TYP., 32 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

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STW35N65DM2
Discrete Semiconductor Products

STW35N65DM2

Active
STMicroelectronics

N-CHANNEL 650 V, 93 MOHM TYP., 32 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW35N65DM2
Current - Continuous Drain (Id) @ 25°C32 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]56.3 nC
Input Capacitance (Ciss) (Max) @ Vds2540 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)250 W
Rds On (Max) @ Id, Vgs110 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 456$ 6.33

Description

General part information

STW35N65DM2 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources