Discrete Semiconductor Products
STP80NF12
ActiveSTMicroelectronics
N-CHANNEL 120V-0.013 OHM-80A TO-220 STRIPFET II MOSFET
Discrete Semiconductor Products
STP80NF12
ActiveSTMicroelectronics
N-CHANNEL 120V-0.013 OHM-80A TO-220 STRIPFET II MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STP80NF12 |
|---|---|
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 189 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4300 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) @ Id, Vgs | 18 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 636 | $ 2.13 | |
Description
General part information
STP80NF12 Series
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
Documents
Technical documentation and resources