Discrete Semiconductor Products

FDMC6688P

Obsolete

P-CHANNEL POWERTRENCH® MOSFET -20V, -56A, 6.5MΩ

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Discrete Semiconductor Products

Obsolete

P-CHANNEL POWERTRENCH® MOSFET -20V, -56A, 6.5MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	FDMC6688P

Current - Continuous Drain (Id) @ 25°C	14 A, 56 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	61 nC
Input Capacitance (Ciss) (Max) @ Vds	7435 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	2.3 W, 30 W
Supplier Device Package	8-PQFN, Power33
Supplier Device Package [x]	3.3 mm
Supplier Device Package [y]	3.3 mm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

P-Channel PowerTrench® MOSFET -20V, -56A, 6.5mΩ

Part	Package / Case	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	FET Type
ON Semiconductor FDMC6688P	8-PowerWDFN	8-PQFN Power33	3.3 mm	3.3 mm	61 nC	14 A 56 A	7435 pF	8 V	2.3 W 30 W	Surface Mount	1.8 V 4.5 V	1 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

ON Semiconductor	N/A	1	$ 0.41

General part information

This P-Channel MOSFET is produced using an advanced PowerTrench®process that has been optimized for rDS(ON), switching performance and ruggedness.

Technical documentation and resources