FDMC6688P Series

P-Channel PowerTrench® MOSFET -20V, -56A, 6.5mΩ

Catalog

P-Channel PowerTrench® MOSFET -20V, -56A, 6.5mΩ

Part	Package / Case	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	FET Type
ON Semiconductor FDMC6688P	8-PowerWDFN	8-PQFN Power33	3.3 mm	3.3 mm	61 nC	14 A 56 A	7435 pF	8 V	2.3 W 30 W	Surface Mount	1.8 V 4.5 V	1 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	P-Channel

P-Channel PowerTrench® MOSFET -20V, -56A, 6.5mΩ

• Max rDS(on)= 6.5 mΩ at VGS= -4.5 V, ID= -14 A

• Max rDS(on)= 9.8 mΩ at VGS= -2.5 V, ID= -11 A

• Max rDS(on)= 20 mΩ at VGS= -1.8 V, ID= -9 A

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability in a widely used surface mount package

• Lead-free and RoHS Compliant

This P-Channel MOSFET is produced using an advanced PowerTrench®process that has been optimized for rDS(ON), switching performance and ruggedness.