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PowerPAK SO-8
Discrete Semiconductor Products

SI7456CDP-T1-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 27.5A PPAK SO-8

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PowerPAK SO-8
Discrete Semiconductor Products

SI7456CDP-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 27.5A PPAK SO-8

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI7456CDP-T1-GE3
Current - Continuous Drain (Id) @ 25°C27.5 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC
Input Capacitance (Ciss) (Max) @ Vds730 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)35.7 W, 5 W
Rds On (Max) @ Id, Vgs23.5 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.61
10$ 1.34
100$ 1.06
500$ 0.90
1000$ 0.76
Digi-Reel® 1$ 1.61
10$ 1.34
100$ 1.06
500$ 0.90
1000$ 0.76
Tape & Reel (TR) 3000$ 0.69
6000$ 0.68

Description

General part information

SI7456 Series

N-Channel 100 V 27.5A (Tc) 5W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources