SI7456 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 27.5A PPAK SO-8
| Part | Supplier Device Package | Mounting Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Technology | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | FET Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 | Surface Mount | 2.8 V | 730 pF | 27.5 A | 20 V | -55 °C | 150 °C | PowerPAK® SO-8 | 23 nC | 4.5 V 10 V | MOSFET (Metal Oxide) | 5 W 35.7 W | 23.5 mOhm | N-Channel | 100 V | ||
Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 | Surface Mount | 2.8 V | 27.8 A | 20 V | -55 °C | 150 °C | PowerPAK® SO-8 | 4.5 V 10 V | MOSFET (Metal Oxide) | 5 W 35.7 W | 23 mOhm | N-Channel | 100 V | 29.5 nC | 900 pF | ||
Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 | Surface Mount | 4 V | 5.7 A | 20 V | -55 °C | 150 °C | PowerPAK® SO-8 | 6 V 10 V | MOSFET (Metal Oxide) | 1.9 W | 25 mOhm | N-Channel | 100 V | 44 nC |