Discrete Semiconductor Products

TK60S06K3L(T6L1,NQ

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MOSFET N-CH 60V 60A DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 60V 60A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK60S06K3L(T6L1,NQ

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	88 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature	Package / Case
Toshiba Semiconductor and Storage TK60S06K3L(T6L1,NQ	60 nC	2900 pF	N-Channel	DPAK+	88 W	6 V 10 V	Surface Mount	MOSFET (Metal Oxide)	8 mOhm	20 V	60 V	60 A	3 V	175 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 60A (Ta) 88W (Tc) Surface Mount DPAK+

Technical documentation and resources