TK60S06 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 60V 60A DPAK
| Part | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Supplier Device Package | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Technology | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Operating Temperature | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 60 nC | 2900 pF | N-Channel | DPAK+ | 88 W | 6 V 10 V | Surface Mount | MOSFET (Metal Oxide) | 8 mOhm | 20 V | 60 V | 60 A | 3 V | 175 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 |