Discrete Semiconductor Products

SICW080N120Y4-BP

Active

N-CHANNEL MOSFET,TO-247-4

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

N-CHANNEL MOSFET,TO-247-4

Technical Specifications

Parameters and characteristics for this part

Specification	SICW080N120Y4-BP

Current - Continuous Drain (Id) @ 25°C	39 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	890 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	223 W
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	TO-247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs(th) (Max) @ Id	3.6 V

Part	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
Micro Commercial Components SICW080N120Y4-BP	TO-247-4	N-Channel	1200 V	890 pF	SiC (Silicon Carbide Junction Transistor)	18 V	39 A	41 nC	3.6 V	85 mOhm	TO-247-4	223 W	-55 °C	175 ░C	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1200 V 39A 223W (Tc) Through Hole TO-247-4

Technical documentation and resources