SICW080 Series

Catalog

N-CHANNEL MOSFET,TO-247-4

Part	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
Micro Commercial Components SICW080N120Y4-BP	TO-247-4	N-Channel	1200 V	890 pF	SiC (Silicon Carbide Junction Transistor)	18 V	39 A	41 nC	3.6 V	85 mOhm	TO-247-4	223 W	-55 °C	175 ░C	Through Hole