Specification	KSC388CYTA

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

KSC388 Series

NPN Epitaxial Silicon Transistor

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature	Mounting Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Package / Case	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor KSC388CYTA	NPN	20	200 mV	TO-92-3	150 °C	Through Hole	100 nA	50 mA	300 MHz	TO-226-3 TO-92-3	25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	7267	$ 0.04

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources