Catalog
NPN Epitaxial Silicon Transistor
Key Features
• GPE= 33dB (TYP.) at f = 45MHz
• Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base)TV Final Picture IF Amplifier Applications
Beta
⌘K
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
| Part | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Operating Temperature | Mounting Type | Current - Collector Cutoff (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Frequency - Transition | Package / Case | Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | NPN | 20 | 200 mV | TO-92-3 | 150 °C | Through Hole | 100 nA | 50 mA | 300 MHz | TO-226-3 TO-92-3 | 25 V |