Discrete Semiconductor Products

SIZ900DT-T1-GE3

Obsolete

MOSFET 2N-CH 30V 24A 6PWRPAIR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 24A 6PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ900DT-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id) (Typical)	24 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	45 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-PowerPair™
Package Name	6-PowerPair™
Power - Max (Value 1)	48 W
Power - Max (Value 2)	100 W
Rds On (Max)	7.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.4 V

Part	Current - Continuous Drain (Id) (Typical)	Vgs(th) (Max)	Package / Case	Package Name	Power - Max (Value 2)	Power - Max (Value 1)	FET Feature	Channel Count	Configuration - Features	Configuration	Drain to Source Voltage (Vdss)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Gate Charge (Max)	Rds On (Max)
Vishay Dale SIZ900DT-T1-GE3	24 A	2.4 V	6-PowerPair™	6-PowerPair™	100 W	48 W	Logic Level Gate	2	Half Bridge	N-Channel	30 V	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	45 nC	7.2 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

Mosfet Array 30V 24A, 28A 48W, 100W Surface Mount 6-PowerPair™

Technical documentation and resources

No documents available