Discrete Semiconductor Products

SIZ900DT-T1-GE3

Obsolete

MOSFET 2N-CH 30V 24A 6PWRPAIR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 24A 6PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ900DT-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	24 A, 28 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1830 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerPair™
Power - Max [Max]	48 W, 100 W
Rds On (Max) @ Id, Vgs	7.2 mOhm
Supplier Device Package	6-PowerPair™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Drain to Source Voltage (Vdss)	Power - Max [Max]	Package / Case	Technology	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Configuration	FET Feature	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIZ900DT-T1-GE3	30 V	48 W 100 W	6-PowerPair™	MOSFET (Metal Oxide)	Surface Mount	6-PowerPair™	2.4 V	24 A 28 A	-55 °C	150 °C	1830 pF	7.2 mOhm	2 N-Channel (Half Bridge)	Logic Level Gate	45 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 24A, 28A 48W, 100W Surface Mount 6-PowerPair™

Technical documentation and resources

No documents available