SIZ900 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 24A 6PWRPAIR
| Part | Drain to Source Voltage (Vdss) | Power - Max [Max] | Package / Case | Technology | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Configuration | FET Feature | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 30 V | 48 W 100 W | 6-PowerPair™ | MOSFET (Metal Oxide) | Surface Mount | 6-PowerPair™ | 2.4 V | 24 A 28 A | -55 °C | 150 °C | 1830 pF | 7.2 mOhm | 2 N-Channel (Half Bridge) | Logic Level Gate | 45 nC |