STP120NF10
ActiveMOSFET TRANSISTOR, N CHANNEL, 110 A, 100 V, 0.009 OHM, 10 V, 4 V ROHS COMPLIANT: YES
STP120NF10
ActiveMOSFET TRANSISTOR, N CHANNEL, 110 A, 100 V, 0.009 OHM, 10 V, 4 V ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | STP120NF10 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 110 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 233 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 312 W |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP120NF10 Series
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Documents
Technical documentation and resources